SS8550 [BL Galaxy Electrical]
Silicon Epitaxial Planar Transistor; 硅外延平面晶体管![SS8550](http://pdffile.icpdf.com/pdf1/p00112/img/icpdf/SS8550_611826_icpdf.jpg)
型号: | SS8550 |
厂家: | ![]() |
描述: | Silicon Epitaxial Planar Transistor |
文件: | 总4页 (文件大小:197K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
SS8550
FEATURES
Pb
Lead-free
z
z
z
Collector Current.(IC= 1.5A)
Complementary To SS8550.
Collector Dissipation: PC=0.3W (TC=25°C)
APPLICATIONS
z
High Collector Current.
SOT-23
ORDERING INFORMATION
Type No.
SS8550
Marking
Y2
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Units
V
Collector-Base Voltage
-40
Collector-Emitter Voltage
Emitter-Base Voltage
-25
V
-5
V
Collector Current -Continuous
Collector Dissipation
-1.5
0.3
A
PC
W
℃
Junction and Storage Temperature
Tj,Tstg
-55~150
Document number: BL/SSSTC087
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
SS8550
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN
TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
IC=-100μA,IE=0
-40
V
V
V
V(BR)CEO
V(BR)EBO
IC=-0.1mA,IB=0
-25
-5
IE=-100μA,IC=0
ICBO
ICEO
IEBO
VCB=-40V,IE=0
VCE=-20V,IB=0
VEB=-5V,IC=0
-0.1
-0.1
-0.1
400
μA
μA
μA
Collector cut-off current
Emitter cut-off current
VCE=-1V,IC=-100mA
VCE=-1V,IC=-800mA
120
40
DC current gain
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
IC=-800mA, IB= -80mA
IC=-800mA, IB= -80mA
VCE(sat)
VBE(sat)
-0.5
-1.2
V
V
VCE=-10V, IC= -50mA
f=30MHz
Transition frequency
fT
100
MHz
Output capacitance
Base-emitter voltage
VCB=-10V,IE=0,f=1MHz
IE=-1.5A
Cob
20
pF
V
VBEF
-1.6
CLASSIFICATION OF hFE(1)
Rank
L
H
J
Range
120-200
200-350
300-400
Document number: BL/SSSTC087
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
SS8550
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC087
Rev.A
www.galaxycn.com
3
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
SS8550
PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
A
SOT-23
Dim
A
Min
2.85
1.25
Max
2.95
1.35
E
K
B
B
C
D
E
1.0Typical
0.37
0.35
1.85
0.02
0.43
0.48
1.95
0.1
J
D
G
G
H
J
H
0.1Typical
C
K
2.35
2.45
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
PACKAGE INFORMATION
Device
Package
SOT-23
Shipping
SS8550
3000/Tape&Reel
Document number: BL/SSSTC087
Rev.A
www.galaxycn.com
4
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