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SS8550 [BL Galaxy Electrical]

Silicon Epitaxial Planar Transistor; 硅外延平面晶体管
SS8550
型号： SS8550
厂家： BL Galaxy Electrical    BL Galaxy Electrical
描述：

Silicon Epitaxial Planar Transistor
硅外延平面晶体管

晶体 晶体管
文件： 总4页 (文件大小：197K)
中文：  中文翻译
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BL Galaxy Electrical  
Production specification  
Silicon Epitaxial Planar Transistor  
SS8550  
FEATURES  
Pb  
Lead-free  
z
z
z
Collector Current.(IC= 1.5A）  
Complementary To SS8550.  
Collector Dissipation: PC=0.3W (TC=25°C)  
APPLICATIONS  
z
High Collector Current.  
SOT-23  
ORDERING INFORMATION  
Type No.  
SS8550  
Marking  
Y2  
Package Code  
SOT-23  
MAXIMUM RATING @ Ta=25℃ unless otherwise specified  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
Units  
V
Collector-Base Voltage  
-40  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-25  
V
-5  
V
Collector Current -Continuous  
Collector Dissipation  
-1.5  
0.3  
A
PC  
W
℃
Junction and Storage Temperature  
Tj,Tstg  
-55~150  
Document number: BL/SSSTC087  
Rev.A  
www.galaxycn.com  
1
BL Galaxy Electrical  
Production specification  
Silicon Epitaxial Planar Transistor  
SS8550  
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified  
Parameter  
Symbol Test conditions  
MIN  
TYP MAX UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO  
IC=-100μA,IE=0  
-40  
V
V
V
V(BR)CEO  
V(BR)EBO  
IC=-0.1mA,IB=0  
-25  
-5  
IE=-100μA,IC=0  
ICBO  
ICEO  
IEBO  
VCB=-40V,IE=0  
VCE=-20V,IB=0  
VEB=-5V,IC=0  
-0.1  
-0.1  
-0.1  
400  
μA  
μA  
μA  
Collector cut-off current  
Emitter cut-off current  
VCE=-1V,IC=-100mA  
VCE=-1V,IC=-800mA  
120  
40  
DC current gain  
hFE  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
IC=-800mA, IB= -80mA  
IC=-800mA, IB= -80mA  
VCE(sat)  
VBE(sat)  
-0.5  
-1.2  
V
V
VCE=-10V, IC= -50mA  
f=30MHz  
Transition frequency  
fT  
100  
MHz  
Output capacitance  
Base-emitter voltage  
VCB=-10V,IE=0,f=1MHz  
IE=-1.5A  
Cob  
20  
pF  
V
VBEF  
-1.6  
CLASSIFICATION OF hFE(1)  
Rank  
L
H
J
Range  
120-200  
200-350  
300-400  
Document number: BL/SSSTC087  
Rev.A  
www.galaxycn.com  
2
BL Galaxy Electrical  
Production specification  
Silicon Epitaxial Planar Transistor  
SS8550  
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified  
Document number: BL/SSSTC087  
Rev.A  
www.galaxycn.com  
3
BL Galaxy Electrical  
Production specification  
Silicon Epitaxial Planar Transistor  
SS8550  
PACKAGE OUTLINE  
Plastic surface mounted package  
SOT-23  
A
SOT-23  
Dim  
A
Min  
2.85  
1.25  
Max  
2.95  
1.35  
E
K
B
B
C
D
E
1.0Typical  
0.37  
0.35  
1.85  
0.02  
0.43  
0.48  
1.95  
0.1  
J
D
G
G
H
J
H
0.1Typical  
C
K
2.35  
2.45  
All Dimensions in mm  
SOLDERING FOOTPRINT  
Unit : mm  
PACKAGE INFORMATION  
Device  
Package  
SOT-23  
Shipping  
SS8550  
3000/Tape&Reel  
Document number: BL/SSSTC087  
Rev.A  
www.galaxycn.com  
4

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